CMOS Past, Present and Future by Henry Radamson Eddy Simoen Jun Luo Chao Zhao & Jun Luo & Eddy Simoen & Chao Zhao

Author:Henry Radamson,Eddy Simoen,Jun Luo,Chao Zhao & Jun Luo & Eddy Simoen & Chao Zhao
Language: eng
Format: epub
ISBN: 9780081021408
Publisher: Elsevier Ltd.
Published: 2018-04-02T16:00:00+00:00

6.4.3 Point defect engineering

While in the previous section diffusion control was targeted by the trapping of vacancies by other impurities or dopant atoms, one can also try to recombine them with self-interstitials. This principle has been demonstrated by performing simultaneous annealing and irradiation [133–135]. The proton irradiation provides a source of excess interstitials to recombine with the vacancies in Ge. While this is a valid proof of concept, more practical methods could rely on the reservoir of self-interstitials present at the EOR after an amorphizing implantation. The principle is sketched in Fig. 6.16 [3] and consists of a two-step annealing sequence. In a first low-temperature step, e.g., 350°C for 30 min, the a-Ge layer is recrystallized by SPER and the EOR damage clusters are formed. In a next high-temperature step (50°C), the dopants are further activated and the damage repaired. The interstitial clusters at the EOR region will dissolve, injecting Is to recombine with excess vacancies. This should retard the P-V diffusion and yield shallower junctions.

Download

Copyright Disclaimer:
This site does not store any files on its server. We only index and link to content provided by other sites. Please contact the content providers to delete copyright contents if any and email us, we'll remove relevant links or contents immediately.